![]() In this work, we report a thermal ALE process for molybdenum disulfide (MoS 2). Thermal atomic layer etching (ALE) is a scalable processing technique that offers precise control over isotropic material removal. Several promising large-scale deposition approaches have been reported for a range of 2D materials, but fewer studies have reported removal processes. ![]() Successful integration of 2D materials into semiconductor manufacturing requires high-volume and high-precision processes for deposition and etching. Two-dimensional (2D) layered materials offer unique properties that make them attractive for continued scaling in electronic and optoelectronic device applications. ![]()
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